Crossbar is a company based in Santa Clara, California.[1] Crossbar develops a class of non-volatile resistive random-access memory (RRAM) technology.[2]
| Company type | Privately held |
|---|---|
| Industry | Semiconductors: memory |
| Founded | 2010 |
| Founder | George Minassian, Hagop Nazarian, Wei Lu |
| Headquarters | |
| Products | Semiconductor Memory Technology |
Number of employees | 20+ |
History
editCrossbar was founded in 2010, by George Minassian, Hagop Nazarian, and Wei Lu.[1][3] As part of the University of Michigan Tech Transfer program, in 2010, Crossbar licensed resistive RAM (RRAM) patents from the University of Michigan.[4] Crossbar filed patents relating to the development, commercialization and manufacturing of RRAM technology.[5]
In August 2013, Crossbar emerged from stealth mode and announced the development of a memory array at a commercial semiconductor device fabrication facility. It was said to deliver faster write performance; lower power consumption and more endurance at half the die size, compared to NAND flash memory. Since it is CMOS-compatible, it can be fabricated without special equipment or materials.[6]
Crossbar received $25 million in funding from Artiman Ventures, Kleiner Perkins Caufield and Byers, Northern Light Venture Capital and the Michigan Investment in New Technology Startups (MINTS) program in 2012.[7] Another funding round of about $35 million was announced in September 2015, with investors from China and Hong Kong.[8]
Crossbar primarily markets to original equipment manufacturers (OEMs) and system on a chip (SOC) developers of consumer, enterprise, mobile, industrial and Internet of things products.[9]
Products
editThe company in 2013 announced its goal was a terabyte of storage on a single RRAM integrated circuit, compatible with standard CMOS semiconductor manufacturing processes,[10] with a prototype showcased the same year having the theoretical ability to achieve this on a 200mm2 chip.[11][12] According to Crossbar, the chip uses a crosspoint array to stack multiple silver-ion-based memory layers on top of each other, with the prototype having three such layers.[13][14]
See also
editReferences
edit- ^ a b "From D: Notice of Exempt Offering of Securities". United States Securities and Exchange Commission. November 20, 2012. Retrieved March 31, 2017.
- ^ Clark, Don. "Crossbar Enters Race to Change Memory Chips". blogs.wsj.com The Wall Street Journal. Retrieved 5 August 2013.
- ^ Shah, Agam. "Startup Crossbar pits RRAM against DRAM and flash storage". CIO.com. Retrieved 5 August 2013.
- ^ Moore, Nicole. "Faster, more powerful mobile devices: U-M startup Crossbar could disrupt the memory market]". ns.umich.edu. Retrieved 5 August 2013.
- ^ Cole, Bernard. "Startup wants to replace NAND and DRAM with silver RRAMs". embedded.com. Retrieved 5 August 2013.
- ^ Harris, Robin. "Flash successor announced". ZDNet. Retrieved 5 August 2013.
- ^ Tom Simonite (August 14, 2013). "Denser, Faster Memory Challenges Both DRAM and Flash". MIT Technology Review. Retrieved March 31, 2017.
- ^ Chris Mellor (September 18, 2015). "D-round VC ReRAM cash comes crashing down on Crossbar: Close, so close to getting its ReRAM afloat before Intel and Micron barge in". The Register. Retrieved March 31, 2017.
- ^ Takahasi, Dean. "Crossbar says it will kill the $60B flash memory market with Resistive RAM, which stores a terabyte on a chip". venturebeat.com. Retrieved 5 August 2013.
- ^ Poeter, Damion. "Startup's 'RRAM' Tech Promises 1TB Memory for Mobile Devices". PCMagazine.com. Retrieved 5 August 2013.
- ^ "Crossbar RRAM Aims for 1TB". eetimes.com. 2014-07-01. Retrieved 2024-07-10.
- ^ "Crossbar Emerges From Stealth, Packing 1TB Into a Single Chip update from August 2013". itprotoday.com. 2013-08-06. Retrieved 2024-07-10.
- ^ "Crossbar unveils resistive RAM with simple, three-layer structure". semiconductor-digest.com. Retrieved 2024-07-10.
- ^ "ReRAM Startup Bets on Silver". eetime.com. 2013-08-05. Retrieved 2024-07-10.