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Original file (SVG file, nominally 326 × 288 pixels, file size: 171 KB)
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Summary
| Description |
العربية: تشويب السيلكون بذرات عنصر ثلاثي التكافؤ من أجل تشكيل شبه موصل مشوب من النوع بي.
English: Silicon doping to create extrinsic semiconductor type P. |
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| Source | Robert Boylestad, Louis Nashelsky (1998).Electronic Devices and Circuit Theory (PDF) (7th Edition). Prentice Hall. P.9. ISBN 013769282X. | |||||||||||||||||
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Licensing
I, the copyright holder of this work, hereby publish it under the following license:
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File history
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 20:13, 9 April 2019 | | 326 × 288 (171 KB) | Michel Bakni | Fix font type |
| 07:19, 24 November 2018 |  | 326 × 288 (52 KB) | Michel Bakni | User created page with UploadWizard |
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