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Summary
| Description |
English: Usage of spin valve in magnetic random access memory (MRAM). 1. Spin-valve sensor as memory cell (arrows indicates ferromagnetic layers occurrence). 2. Row line. 3. Column line. Ellipses with arrows indicates magnetic field lines when current flow in row and column lines.
Русский: Использование спинового клапана в магниторезистивной памяти с произвольным доступом (MRAM). 1. Спиновый клапан в качестве ячейки памяти (стрелки обозначают наличие ферромагнитных слоев). 2. Линия строки. 3. Линия столбца. Эллипсы со стрелками обозначают силовые линии магнитного поля вокруг линий строки и столбца во время прохождения электрического тока в них. |
| Date | |
| Source | Own work |
| Author | Alex-engraver |
| Permission (Reusing this file) |
  This file is licensed under the Creative Commons Attribution 3.0 Unported license.
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Licensing
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Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation License, Version 1.2 or any later version published by the Free Software Foundation; with no Invariant Sections, no Front-Cover Texts, and no Back-Cover Texts. A copy of the license is included in the section entitled GNU Free Documentation License. |
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 16:22, 30 April 2011 | | 500 × 400 (17 KB) | Alex-engraver | {{Information |Description ={{en|1=Usage of spin valve in magnetic random access memory (MRAM). '''1.''' Spin-valve sensor as memory cell (arrows indicates ferromagnetic layers occurrence). '''2.''' Row line. '''3.''' Column line. Ellipses with arrows |
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- Usage on ru.wikipedia.org
- Usage on uk.wikipedia.org
