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Summary
| Description |
English: Energy band diagram for a basic lateral TFET structure. The device turns on' when sufficient gate voltage is applied such that electrons can tunnel from the source valence band to the channel conduction band. |
| Date | |
| Source | made in powerpoint |
| Author | Jteherani |
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Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation License, Version 1.2 or any later version published by the Free Software Foundation; with no Invariant Sections, no Front-Cover Texts, and no Back-Cover Texts. A copy of the license is included in the section entitled GNU Free Documentation License. |
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 19:30, 20 December 2013 | | 759 × 620 (45 KB) | Jteherani | fixed image crop |
| 19:12, 20 December 2013 |  | 802 × 620 (46 KB) | Jteherani | {{subst:Upload marker added by en.wp UW}} {{Information |Description = {{en|Energy band diagram for a basic lateral TFET structure. The device turns ''on' when sufficient gate voltage is applied such that electrons can tunnel from the source valence b... |
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