Hafnium disulfide

Hafnium disulfide
Names
	IUPAC name Hafnium disulfide
Identifiers
CAS Number	18855-94-2 ;
3D model (JSmol)	Interactive image;
ChemSpider	8374205 ;
ECHA InfoCard	100.038.738
PubChem CID	101811522;
CompTox Dashboard (EPA)	DTXSID301314401 ;
	InChI InChI=1S/Hf.2S ;
	SMILES S=[Hf]=S;
Properties
Chemical formula	HfS2
Molar mass	246.62 g/mol
Appearance	Brown solid
Density	6.03 g/cm3
Band gap	~1.8 eV (indirect)
Structure
Crystal structure	hP3, P3m1, No 164
Lattice constant	a = 0.363 nm, c = 0.584 nm
Formula units (Z)	1
Related compounds
Other anions	Hafnium dioxide
Other cations	Tungsten disulfide; Molybdenum disulfide
	Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). verify (what is ?) Infobox references

Hafnium disulfide is an inorganic compound of hafnium and sulfur. It is a layered dichalcogenide with the chemical formula is HfS₂. A few atomic layers of this material can be exfoliated using the standard Scotch Tape technique (see graphene) and used for the fabrication of a field-effect transistor.^[4] High-yield synthesis of HfS₂ has also been demonstrated using liquid phase exfoliation, resulting in the production of stable few-layer HfS₂ flakes.^[5] Hafnium disulfide powder can be produced by reacting hydrogen sulfide and hafnium oxides at 500–1300 °C.^[6]

References

^ ^a ^b Haynes, William M., ed. (2011). CRC Handbook of Chemistry and Physics (92nd ed.). Boca Raton, FL: CRC Press. p. 4.66. ISBN 1-4398-5511-0.
^ Terashima, K.; Imai, I. (1987). "Indirect absorption edge of ZrS₂ and HfS₂". Solid State Communications. 63 (4): 315. Bibcode:1987SSCom..63..315T. doi:10.1016/0038-1098(87)90916-1.
^ Hodul, David T.; Stacy, Angelica M. (1984). "Anomalies in the properties of Hf(S_2−xTe_x)_1-y and Hf(Se_2−xTe_x)_1-y near the metal-insulator transition". Journal of Solid State Chemistry. 54 (3): 438. Bibcode:1984JSSCh..54..438H. doi:10.1016/0022-4596(84)90176-2.
^ Kanazawa, Toru; Amemiya, Tomohiro; Ishikawa, Atsushi; Upadhyaya, Vikrant; Tsuruta, Kenji; Tanaka, Takuo; Miyamoto, Yasuyuki (2016). "Few-layer HfS₂ transistors". Scientific Reports. 6: 22277. Bibcode:2016NatSR...622277K. doi:10.1038/srep22277. PMC 4772098. PMID 26926098.
^ Kaur, Harneet (2017). "High Yield Synthesis and Chemical Exfoliation of Two-Dimensional Layered Hafnium Disulphide". Nano Research. arXiv:1611.00895. doi:10.1007/s12274-017-1636-x. S2CID 99414438.
^ Kaminskii, B. T.; Prokof'eva, G. N.; Plygunov, A. S.; Galitskii, P. A. (1973-07-01). "Manufacture of zirconium and hafnium sulfide powders". Soviet Powder Metallurgy and Metal Ceramics. 12 (7): 521–524. doi:10.1007/BF00796747. S2CID 95277086.

[b92-1] Haynes, William M., ed. (2011). CRC Handbook of Chemistry and Physics (92nd ed.). Boca Raton, FL: CRC Press. p. 4.66. ISBN 1-4398-5511-0.

[2] Terashima, K.; Imai, I. (1987). "Indirect absorption edge of ZrS₂ and HfS₂". Solid State Communications. 63 (4): 315. Bibcode:1987SSCom..63..315T. doi:10.1016/0038-1098(87)90916-1.

[str-3] Hodul, David T.; Stacy, Angelica M. (1984). "Anomalies in the properties of Hf(S_2−xTe_x)_1-y and Hf(Se_2−xTe_x)_1-y near the metal-insulator transition". Journal of Solid State Chemistry. 54 (3): 438. Bibcode:1984JSSCh..54..438H. doi:10.1016/0022-4596(84)90176-2.

[4] Kanazawa, Toru; Amemiya, Tomohiro; Ishikawa, Atsushi; Upadhyaya, Vikrant; Tsuruta, Kenji; Tanaka, Takuo; Miyamoto, Yasuyuki (2016). "Few-layer HfS₂ transistors". Scientific Reports. 6: 22277. Bibcode:2016NatSR...622277K. doi:10.1038/srep22277. PMC 4772098. PMID 26926098.

[5] Kaur, Harneet (2017). "High Yield Synthesis and Chemical Exfoliation of Two-Dimensional Layered Hafnium Disulphide". Nano Research. arXiv:1611.00895. doi:10.1007/s12274-017-1636-x. S2CID 99414438.

[6] Kaminskii, B. T.; Prokof'eva, G. N.; Plygunov, A. S.; Galitskii, P. A. (1973-07-01). "Manufacture of zirconium and hafnium sulfide powders". Soviet Powder Metallurgy and Metal Ceramics. 12 (7): 521–524. doi:10.1007/BF00796747. S2CID 95277086.

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