Diana Huffaker is an American physicist working in compound semiconductors optical devices. She is the current Electrical Engineering Department Chair at the University of Texas at Arlington. Previously, she served as the Sêr Cymru Chair in Advanced Engineering and Materials and as Science Director of the Institute of Compound Semiconductors at Cardiff University. Her work includes compound semiconductor epitaxy, lasers, solar cells, optoelectronic devices, plasmonics, and Quantum dot and nanostructured materials.
Diana Huffaker | |
|---|---|
| Alma mater | The University of Texas at Austin - PhD in Electrical Engineering
The University of Texas at Austin - Masters in Materials sciences University of Arizona - Bachelors in Engineering Physics |
| Awards | The Optical Society, Fellow[8]
SPIE, Nanoengineering Pioneer Award Creative Awards, Most Valuable Patent DoD, National Security Science and Engineering Faculty Fellow (NSSEFF) IEEE, Fellow Alexander Von Humboldt Fellowship |
| Scientific career | |
| Fields | epitaxy, optoelectronic devices, plasmonics, Quantum dot and nanostructured |
| Institutions | Current:
Former: University of California, Los Angeles |
Research and career
editPrior to moving to Cardiff University in 2015,[1] Huffaker was Professor in Electrical Engineering and Director of the Integrated Nanomaterials Laboratory at the University of California, Los Angeles (UCLA).
Highly cited papers
edit- Huffaker, D. L., Deppe, D. G., Kumar, K., & Rogers, T. J. (1994). Native-oxide defined ring contact for low threshold vertical-cavity lasers. Applied Physics Letters, 65(1), 97–99. doi:10.1063/1.113087[2]
- Huffaker, D. L., & Deppe, D. G. (1998). Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots. Applied Physics Letters, 73(4), 520–522. doi:10.1063/1.121920[3]
- Huffaker, D. L., Park, G., Zou, Z., Shchekin, O. B., & Deppe, D. G. (1998). 1.3 μm room-temperature GaAs-based quantum-dot laser. Applied Physics Letters, 73(18), 2564–2566. doi:10.1063/1.122534[4]
- Gyoungwon Park, Shchekin, O. B., Huffaker, D. L., & Deppe, D. G. (2000). Low-threshold oxide-confined 1.3-μm quantum-dot laser. IEEE Photonics Technology Letters, 12(3), 230–232. doi:10.1109/68.826897[5]
- Huang, S. H., Balakrishnan, G., Khoshakhlagh, A., Jallipalli, A., Dawson, L. R., & Huffaker, D. L. (2006). Strain relief by periodic misfit arrays for low defect density GaSb on GaAs. Applied Physics Letters, 88(13), 131911. doi:10.1063/1.2172742[6]
- Laghumavarapu, R. B., Moscho, A., Khoshakhlagh, A., El-Emawy, M., Lester, L. F., & Huffaker, D. L. (2007). GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response. Applied Physics Letters, 90(17), 173125. doi:10.1063/1.2734492[7]
Awards and honours
edit- The Optical Society, Fellow, 2014[8]
- SPIE, Nanoengineering Pioneer Award, 2010
- Creative Awards, Most Valuable Patent, 2009
- DoD, National Security Science and Engineering Faculty Fellow (NSSEFF), 2008
- IEEE, Fellow, 2008
- Alexander Von Humboldt Fellowship, 2004
External links
edit- Diana Huffaker: Home Page Archived 2019-03-26 at the Wayback Machine, Department of Physics and Astronomy, Cardiff University
- Diana Huffaker: Home Page, Electrical and Computer Engineering, UCLA
References
edit- ^ "Diana Huffaker joins Cardiff University to lead research lab". BBC. 26 May 2015. Retrieved 8 October 2018.
- ^ Huffaker, D. L.; Deppe, D. G.; Kumar, K.; Rogers, T. J. (1994-07-04). "Native-oxide defined ring contact for low threshold vertical-cavity lasers". Applied Physics Letters. 65 (1): 97–99. Bibcode:1994ApPhL..65...97H. doi:10.1063/1.113087. ISSN 0003-6951.
- ^ Huffaker, D. L.; Deppe, D. G. (1998-07-27). "Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots". Applied Physics Letters. 73 (4): 520–522. Bibcode:1998ApPhL..73..520H. doi:10.1063/1.121920. ISSN 0003-6951.
- ^ Huffaker, D. L.; Park, G.; Zou, Z.; Shchekin, O. B.; Deppe, D. G. (1998-11-02). "1.3 μm room-temperature GaAs-based quantum-dot laser". Applied Physics Letters. 73 (18): 2564–2566. Bibcode:1998ApPhL..73.2564H. doi:10.1063/1.122534. ISSN 0003-6951.
- ^ Gyoungwon Park; Shchekin, O.B.; Huffaker, D.L.; Deppe, D.G. (2000). "Low-threshold oxide-confined 1.3-μm quantum-dot laser". IEEE Photonics Technology Letters. 12 (3): 230–232. Bibcode:2000IPTL...12..230P. doi:10.1109/68.826897. ISSN 1041-1135. S2CID 44033442.
- ^ Huang, S. H.; Balakrishnan, G.; Khoshakhlagh, A.; Jallipalli, A.; Dawson, L. R.; Huffaker, D. L. (2006-03-27). "Strain relief by periodic misfit arrays for low defect density GaSb on GaAs". Applied Physics Letters. 88 (13): 131911. Bibcode:2006ApPhL..88m1911H. doi:10.1063/1.2172742. ISSN 0003-6951. S2CID 120236461.
- ^ Laghumavarapu, R. B.; Moscho, A.; Khoshakhlagh, A.; El-Emawy, M.; Lester, L. F.; Huffaker, D. L. (2007-04-23). "GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response". Applied Physics Letters. 90 (17): 173125. Bibcode:2007ApPhL..90q3125L. doi:10.1063/1.2734492. ISSN 0003-6951.
- ^ "2014 Fellows of the Optical Society of America". Retrieved 18 September 2019.