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Comment: Does appear to be notable under WP:NPROF, however the page reads like a CV not an encyclopedic article. Also, please make a conflict of interest declaration on your user page to make it clear that you are writing a page about yourself. Rusalkii (talk) 20:40, 24 May 2024 (UTC)
Abhisek Dixit[1] is NXP Chair full Professor at the Department of Electrical Engineering, Indian Institute of Technology Delhi (IIT Delhi)[2], New Delhi, India. His research interests are in modeling and characterization of semiconducting qubits and cryogenic CMOS[3][4] and reliability[5][6].
References
edit- ^ "::: Dr. Abhisek Dixit, IIT Delhi :::". web.iitd.ac.in. Retrieved 2024-06-08.
- ^ "Home Page : IIT Delhi". home.iitd.ac.in. Retrieved 2024-06-08.
- ^ Singh, Sujit Kumar; Sharma, Deepesh; Vega, Reinaldo A.; Dixit, Abhisek (June 2023). "Compact Model of a Bulk FinFET Quantum Dot Toward Single Chip Integration of Qubits and Control Electronics for Quantum Computing Applications". IEEE Transactions on Electron Devices. 70 (6): 2911–2918. Bibcode:2023ITED...70.2911S. doi:10.1109/TED.2023.3265943. ISSN 0018-9383.
- ^ Gupta, Sumreti; Amin, Asifa; Vega, Reinaldo A.; Dixit, Abhisek (January 2024). "Investigation and Modeling of Multifrequency CV characteristics for 10-nm Bulk FinFETs at Cryogenic Temperatures". Solid-State Electronics. 211: 108820. Bibcode:2024SSEle.21108820G. doi:10.1016/j.sse.2023.108820.
- ^ Amin, Asifa; Gupta, Sumreti; Srinivasan, Purushothaman; Gonzalez, Oscar H.; Guarin, Fernando; Dixit, Abhisek (December 2023). "Time-Dependent Dielectric Breakdown in 45-nm PD-SOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications". IEEE Transactions on Device and Materials Reliability. 23 (4): 503–509. doi:10.1109/TDMR.2023.3312735. ISSN 1530-4388.
- ^ Rathi, Aarti; Srinivasan, Purushothaman; Guarin, Fernando; Dixit, Abhisek (September 2023). "Temperature-Dependent Study of Large-Signal Reliability of p-FET-Based Power Amplifier for mmWave Applications". IEEE Transactions on Device and Materials Reliability. 23 (3): 412–418. doi:10.1109/TDMR.2023.3293794. ISSN 1530-4388.