Guohan Hu is an electrical engineer specializing in magnetic storage and spintronics, and especially in the use of spin-transfer torque in magnetoresistive RAM, a type of non-volatile random-access memory.[1] She works for IBM Research at the Thomas J. Watson Research Center as a distinguished research staff member and manager of the MRAM Materials and Devices group.[2]
Guohan Hu | |
|---|---|
| Education | Ph.D. from Cornell University |
| Occupation | Electrical engineering |
| Known for | Researching magnetoresistive RAM |
| Awards | IEEE Fellow |
Hu has a Ph.D. from Cornell University, completed in 2002.[2] She was elected as an IEEE Fellow in 2022, "for contributions to Spin-Transfer-Torque MRAM materials and devices".[3] She was named a Fellow of the American Physical Society in 2023, "for pioneering advancements in the development of materials and devices for spin-transfer torque magnetic random access memory, resulting in breakthroughs that have significantly enhanced the performance, scalability, and reliability of next-generation non-volatile memory technologies".[4]
References
edit- ^ Researchers celebrate 20th anniversary of IBM's invention of Spin Torque MRAM by demonstrating scalability for the next decade, IBM Research, July 7, 2016, retrieved 2023-04-15
- ^ a b Del Alamo, Jesús A. (July 2022), "Changes to the editorial board", IEEE Electron Device Letters, 43 (7): 994, Bibcode:2022IEDL...43..994D, doi:10.1109/led.2022.3176520
- ^ 2022 Newly Elevated Fellows (PDF), IEEE, archived from the original (PDF) on 2021-11-24, retrieved 2023-04-15
- ^ "2023 Fellows", APS Fellow Archive, American Physical Society, retrieved 2023-10-19
External links
edit- Guohan Hu publications indexed by Google Scholar
 | This article about an American electrical engineer is a stub. You can help Wikipedia by expanding it. |