Indium acetylacetonate

Indium acetylacetonate^[1]
Names
	IUPAC name (Z)-4-bis[(Z)-1-methyl-3-oxobut-1-enoxy]indiganyloxypent-3-en-2-one
Identifiers
CAS Number	14405-45-9 ;
3D model (JSmol)	Interactive image;
ECHA InfoCard	100.034.874
PubChem CID	16687813;
UNII	9U75RH2FEI ;
CompTox Dashboard (EPA)	DTXSID70904288 ;
	SMILES CC(=CC(=O)C)O[In](OC(=CC(=O)C)C)OC(=CC(=O)C)C;
Properties
Chemical formula	C15H21InO6
Molar mass	412.145 g·mol−1
Appearance	white
Density	1.52 g/cm3
	Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). Infobox references

Indium acetylacetonate, also known as In(acac)₃, is a compound with formula In(C₅H₇O₂)₃. It is a colorless solid. It adopts an octahedral structure.^[2]

Uses

Indium acetylacetonate and tin(II) acetylacetonate can be used to prepare indium tin oxide thin films with an atmospheric‐pressure chemical vapor deposition method. The resulting thin films are transparent and conductive, with a thickness of about 200 nanometers.^[3] Copper indium gallium diselenide (CIGS) can also be produced with indium acetylacetonate. Thin-film CIGS solar cells are synthesized with atomic layer chemical vapour deposition (ALCVD) using In(acac)₃ and hydrogen sulfide.^[4]

References

^ Indium acetylacetonate at American Elements
^ Palenik, G. J.; Dymock, K. R. (1980). "The structure of tris(2,4-pentanedionato)indium(III)". Acta Crystallographica Section B: Structural Crystallography and Crystal Chemistry. 36 (9): 2059–2063. Bibcode:1980AcCrB..36.2059P. doi:10.1107/S0567740880007935.
^ Maruyama, Toshiro; Fukui, Kunihiro (1991). "Indium-tin oxide thin films prepared by chemical vapor deposition". Journal of Applied Physics. 70 (7): 3848–3851. Bibcode:1991JAP....70.3848M. doi:10.1063/1.349189. hdl:2433/43533.
^ Naghavi, N.; Spiering, S.; Powalla, M.; Cavana, B.; Lincot, D. (2003). "High-efficiency copper indium gallium diselenide (CIGS) solar cells with indium sulfide buffer layers deposited by atomic layer chemical vapor deposition (ALCVD)". Progress in Photovoltaics: Research and Applications. 11 (7): 437–443. doi:10.1002/pip.508.

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[americanelements-1] Indium acetylacetonate at American Elements

[2] Palenik, G. J.; Dymock, K. R. (1980). "The structure of tris(2,4-pentanedionato)indium(III)". Acta Crystallographica Section B: Structural Crystallography and Crystal Chemistry. 36 (9): 2059–2063. Bibcode:1980AcCrB..36.2059P. doi:10.1107/S0567740880007935.

[InSn-3] Maruyama, Toshiro; Fukui, Kunihiro (1991). "Indium-tin oxide thin films prepared by chemical vapor deposition". Journal of Applied Physics. 70 (7): 3848–3851. Bibcode:1991JAP....70.3848M. doi:10.1063/1.349189. hdl:2433/43533.

[CIGS-4] Naghavi, N.; Spiering, S.; Powalla, M.; Cavana, B.; Lincot, D. (2003). "High-efficiency copper indium gallium diselenide (CIGS) solar cells with indium sulfide buffer layers deposited by atomic layer chemical vapor deposition (ALCVD)". Progress in Photovoltaics: Research and Applications. 11 (7): 437–443. doi:10.1002/pip.508.

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