The International Workshop on Nitride Semiconductors (IWN) is a biennial academic conference in the field of group III nitride research. The IWN and the International Conference on Nitride Semiconductors (ICNS) are held in alternating years and cover similar subject areas. IWN is pioneered by Isamu Akasaki (Nagoya University, Meijo University) and Hiroshi Amano (Nagoya University), who are Nobel laureates in physics (2014)
| International Workshop on Nitride Semiconductors | |
|---|---|
| Abbreviation | IWN |
| Discipline | Materials Science Solid State Physics Electronic Engineering |
| Publication details | |
| Publisher | Wiley-VCH Physica Status Solidi |
| History | 2000– |
| Frequency | Biennial |
- IWN2018 was held 11–16 November 2018 in Kanazawa, Japan, and chaired by Hiroshi Fujioka (the University of Tokyo, Japan)[1]
- IWN2016 was held 2–7 October 2016 in Orlando, United States, and jointly chaired by Alan Doolittle (Georgia Institute of Technology and Tomás Palacios (Massachusetts Institute of Technology, USA)[2]
- IWN2012 was held 14–19 October 2012 in Sapporo, Japan and chaired by Hiroshi Amano (Nagoya University, Japan).
Conference list
edit| Conference name | Location | Dates |
|---|---|---|
| IWN2024[3] |  Honolulu, USA
|
3-8 November 2024 |
| IWN2022[4] |  Berlin, Germany
|
9–14 October 2022 |
| IWN2018[5] |  Kanazawa, Japan
|
11–16 November 2018 |
| IWN2016[6] | Orland, United States
|
2–8 October 2016 |
| IWN2014 |  Wrocław, Poland |
24–29 August 2014 |
| IWN2012[7] | Sapporo, Japan |
14–19 October 2012 |
| IWN2010[8] | Tampa, United States |
19–24 September 2010 |
| IWN2008[9][10] |  Montreux, Switzerland |
6–10 October 2008 |
| IWN2006[11] | Kyoto, Japan |
22–27 October 2006 |
| IWN2004[12] | Pittsburgh, USA |
19–23 July 2004 |
| IWN2002[13] | Aachen, Germany |
22–25 July 2002 |
| IWN2000[14] | Nagoya, Japan |
24–27 September 2000 |
See also
editReferences
edit- ^ "IWN2018".
- ^ "IWN2016" (PDF). Archived from the original (PDF) on 2020-03-25. Retrieved 2022-06-02.
- ^ "International Workshop on Nitride Semiconductors 2024". www.iwn2024.org. Retrieved 2024-07-22.
- ^ "International Workshop on Nitride Semiconductors 2022". www.iwn2022.org. Retrieved 2022-10-10.
- ^ "International Workshop on Nitride Semiconductors 2018". www.iwn2018.jp. Retrieved 2016-11-01.
- ^ "International Workshop on Nitride Semiconductors (IWN 2016)". www.mrs.org. Archived from the original on 2016-11-01. Retrieved 2016-11-01.
- ^ "Iwn2012". Archived from the original on 2011-09-18. Retrieved 2011-07-16.
- ^ "Iwn 2010". Archived from the original on 2011-02-16. Retrieved 2011-02-14.
- ^ "Iwn 2008". Archived from the original on 2010-09-29. Retrieved 2011-02-14.
- ^ N. Grandjean, M. Ilegems, T. Suski and R. Butté (2009) "Preface: Phys. Status Solidi C 6/S2" Physica Status Ssolidi (c) 6 S289–S292 doi:10.1002/pssc.200960059
- ^ K. Akimoto, S. Chichibu and T. Suemasu (2007) "Preface: phys. stat. sol. (c) 4/7" Physica Status Solidi C 4 2204–2208 doi:10.1002/pssc.200790011
- ^ "Proceedings of the International Workshop on Nitride Semiconductors (IWN 2004)" Physica Status Solidi C 1 issue 13 ISBN 978-3-527-40568-8
- ^ A. Hoffmann and A. Rizzi (2003) "Editor's Preface: phys. stat. sol. (c) 0/1" Physica Status Solidi C 0 21 doi:10.1002/pssc.200390028
- ^ "Proceedings of International Workshop on Nitride Semiconductors" ISBN 4-900526-13-4