Srimanta Baishya is an Indian academician and Professor at the National Institute of Technology Silchar in the Department of Electronics and Communications Engineering.[1] He earned his B.E. in electrical engineering from Assam Engineering College in Guwahati, followed by an M.Tech. in electrical engineering from the Indian Institute of Technology Kanpur. Baishya further pursued his Ph.D. in MOS Modeling from Jadavpur University in Kolkata. Presently, he serves as a professor at NIT Silchar, focusing on research areas such as MOS physics, modeling, and MEMS.[2][3]
Srimanta Baishya | |
|---|---|
| Nationality | Indian |
| Academic background | |
| Alma mater | Jadavpur University |
| Academic work | |
| Discipline | Electronics and Communications Engineering |
| Institutions | Jadavpur University |
Career
editIn his tenure at NIT Silchar, he has held prominent administrative positions, including the Dean of Academics, Dean of Research & Consultancy, and the Head of the department.[4][5]
Selected bibliography
editSelected articles
edit- S. Baishya, A. Mallik, and C. K. Sarkar, “A Threshold Voltage Model for Short-Channel MOSFETs Taking into Account the Varying Depth of Channel Depletion Layers Around the Source and Drain,” Microelectronics Reliability, pp. 17 – 22, vol. 48, January 2008.[6]
- S. Baishya, A. Mallik, and C. K. Sarkar, “A Pseudo-two-dimensional Subthreshold Surface Potential Model for Dual-material Gate MOSFETs,” IEEE Transactions on Electron Devices, pp. 2520–2525, vol. 54, September 2007.[7]
- S. Baishya, A. Mallik, and C. K. Sarkar, “A Surface Potential Based Subthreshold Drain Current Model for Short-channel MOS Transistors,” Semiconductor Science & Technology, pp. 1066–1069, vol. 22, 2007.[8]
- S. Baishya, A. Mallik, and C. K. Sarkar, “Subthreshold Surface Potential and Drain Current Models for Short-channel Pocket-implanted MOSFETs,” Microelectronic Engineering, vol. 84, pp. 653–662, April 2007.[9]
- S. Baishya, A. Mallik, and C. K. Sarkar, “A Subthreshold Surface Potential Model for Short-channel MOSFET Taking into Account the Varying Depth of Channel Depletion Layer due to Source and Drain Junctions,” IEEE Transactions on Electron Devices, vol. 53, pp. 507–514, March 2006.[10]
References
edit- ^ "Srimanta Baishya". scholar.google.com. Retrieved 17 September 2023.
- ^ "Prof. Srimanta Baishya |". Retrieved 17 September 2023.
- ^ "Vidwan | Profile Page". vidwan.inflibnet.ac.in. Retrieved 17 September 2023.
- ^ "National Institute of Technology, Silchar". josaa.admissions.nic.in. Archived from the original on 17 April 2023. Retrieved 17 September 2023.
- ^ "INDIAN RESEARCH INFORMATION NETWORK SYSTEM". irins.inflibnet.ac.in. Retrieved 17 September 2023.
- ^ Baishya, Srimanta; Mallik, Abhijit; Sarkar, Chandan Kumar (1 January 2008). "A threshold voltage model for short-channel MOSFETs taking into account the varying depth of channel depletion layers around the source and drain". Microelectronics Reliability. 48 (1): 17–22. doi:10.1016/j.microrel.2007.01.086. ISSN 0026-2714.
- ^ Baishya, S.; Mallik, A.; Sarkar, C. K. (September 2007). "A Pseudo Two-Dimensional Subthreshold Surface Potential Model for Dual-Material Gate MOSFETs". IEEE Transactions on Electron Devices. 54 (9): 2520–2525. doi:10.1109/TED.2007.903204. ISSN 1557-9646.
- ^ Baishya, S; Mallik, A; Sarkar, C K (1 September 2007). "A surface potential based subthreshold drain current model for short-channel MOS transistors". Semiconductor Science and Technology. 22 (9): 1066–1069. doi:10.1088/0268-1242/22/9/015. ISSN 0268-1242.
- ^ Baishya, Srimanta; Mallik, Abhijit; Sarkar, Chandan Kumar (1 April 2007). "Subthreshold surface potential and drain current models for short-channel pocket-implanted MOSFETs". Microelectronic Engineering. 84 (4): 653–662. doi:10.1016/j.mee.2006.12.008. ISSN 0167-9317.
- ^ Baishya, S.; Mallik, A.; Sarkar, C.K. (March 2006). "A subthreshold surface potential model for short-channel MOSFET taking into account the varying depth of channel depletion layer due to source and drain junctions". IEEE Transactions on Electron Devices. 53 (3): 507–514. doi:10.1109/TED.2005.864364. ISSN 1557-9646.