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editThe claim that Cadmium Arsenide has the highest electron mobility of all semiconductors is false. Indium Antimonide has the highest room temperature electron mobility (~78,000 cm^2/Vs) of conventional semiconductors at room temperature, and it is surpassed by carbon nanotubes and graphene.
The first paragraph of Dowgiałło-Plenkiewicz [5] states a room temperature electron mobility of 10,000 cm^2/Vs, not 100,000 cm^2/Vs. Cd3As may very well have a mobility of 100,000 cm^2/Vs at cryogenic temperatures, but it will be exceeded by several other semiconductors at those temperatures, including InSb. — Preceding unsigned comment added by 184.64.134.197 (talk) 02:24, 21 October 2014 (UTC)