Text and/or other creative content from this version of Charge carriers in semiconductors was copied or moved into Charge carrier with this edit on 19:43, 16 December 2011. The former page's history now serves to provide attribution for that content in the latter page, and it must not be deleted as long as the latter page exists. |
There is a fundemental mistake in the description FET and BJT operation. FETs are not "complex" devices, they are mjority carrier transistors. It is the BJTs that rely on minority carrier injection into the base. The two seem to have been confused. I will correct it but would like more discussion.--Murat (talk) 19:17, 22 November 2009 (UTC)