Talk:Extrinsic semiconductor

Related articles already exist

This new page overlaps material in already existing articles. See, for example, N-type semiconductor and P-type semiconductor. DFH 18:34, 27 March 2007 (UTC)

I have therefore linked the first mention of each in the paragraph text as well as in the image captions. Even so, this minor edit does not preclude the observed duplication of information. DFH 18:42, 27 March 2007 (UTC)

Inaccurate or Incomplete

"An extrinsic semiconductor is a semiconductor that has been doped.." What about extrinsic semiconductors that are insulators before they are doped e.g. boron doped diamond? That's a doped insulator, not a doped semiconductor.82.46.3.220 (talk) 13:32, 7 November 2010 (UTC)

And again "During doping, impurity atoms are introduced to an intrinsic semiconductor" This assumption is also made through most of the article. There is a lot to be fixed. 82.46.3.220 (talk) 13:38, 7 November 2010 (UTC)

I guess then that it's too much to ask to use more informative images, like the one that has the silicon matrix with the dopeant (although i disagree with some of it, it needs to be redone with chemistry in mind) Charlieb000 (talk) 07:44, 23 July 2014 (UTC)

For the P-type semiconductors the concept of " positive charge of the hole" needs to be rethought. Calling holes positively charged is a way to common miss-understanding of semiconductor function. The "hole" is the missing valance electron in the silicone crystal matrix due to boron only having 3 valance electrons. The net charge of the boron atom is 0 so slipping it into the silicon matrix does not create a positive charge. This "hole" will be a lower energy level for the extra electron from the N material to fall into, creating the negative charge in the P material at the PN interface and the plus charge in the N material when the electron jumps over and into the P valence hole. And this creation at the PN junction of a + charged N material and a - charged P material is the foundation of diode function, eg the depletion region. If the hole were in fact + then the electron would just cancel it to no net charge and there would be no diode and no semiconductors. CJr2d2 (talk) 22:19, 3 March 2015 (UTC)

Suggestion: The table should also list type II-VI semiconductors like CdTe.

Merge Extrinsic semiconductor and Intrinsic semiconductor?

I suggest merging Extrinsic semiconductor and Intrinsic semiconductor. Both these articles are little more than stubs, and both articles are basically redundant; to explain one of these two complementary concepts requires explaining the other. Either article could be the target of the merger; but I think it might make more sense to merge both into a new article: Intrinsic and extrinsic semiconductor. What do you all think? --Chetvorno^TALK 03:12, 4 August 2018 (UTC)

Oppose on the grounds that they each have distinctive characteristics or properties which are worth discussing separately. They seem to be much more than stubs, although they are poorly referenced at present. Even if a merge were to take place, the proposed joint title doesn't work, as there is no such thing as a Intrinsic and extrinsic semiconductor (a tautology) - the plural would should be used, which is consistent with WP:PLURAL as it would be an article on groups or classes of specific things. However, that would effectively be the same as Semiconductor, which would be the better target. On balance, though, I suggest leaving as it is and referencing the pages more carefully. Klbrain (talk) 21:46, 3 September 2019 (UTC)

Closing, given the absence of support and uncontested opposition. Klbrain (talk) 08:31, 28 October 2019 (UTC)

Resolved

New high mobility transparent p-type oxide semiconductor

Under p-type semiconductor here could mention A Super-Thin Element Offers 'Positive' Potential for Transparent Electronics ? beta-telluride. (or maybe it's more significant for transparent conducting oxide) - Rod57 (talk) 17:40, 21 April 2021 (UTC)

Semiconductors

How are extrinsic semiconductors formed 41.223.119.36 (talk) 12:47, 19 February 2022 (UTC)