Tellurogallates are chemical compounds which contain anionic units of tellurium connected to gallium. They can be considered as gallates where tellurium substitutes for oxygen. Similar compounds include the thiogallates, selenogallates, telluroaluminates, telluroindates and thiostannates. They are in the category of chalcogenotrielates or more broadly tellurometallates or chalcogenometallates.

Formation

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Tellurogallates may be produced by heating a metal with gallium and tellurium in a sealed tube.

Properties

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Some tellurogallates are semiconductors

Tellurogallates are primarily of research interest. They are investigated for their infrared, thermoelectric and semiconductor characteristics.

List

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name chem mw crystal system space group unit cell Å volume density comment CAS

no

references
lithium tellurogallate LiGaTe2 321.86 tetragonal I42d a=6.338 c=11.704 Z=16 470.1 2.937 orange to black; band gap 2.41 eV [1][2]
sodium trigallium pentatelluride NaGa3Te5 trigonal R32 a=14.58 c=17.761 Z=12 3269.5 5.272 black [3]
[(C6H5)4P]GaTe2(en)2 en = ethane-1,2-diamine monoclinic C2/c a=20.680 b=5.3877 c=27.192 β=19.13° 3029.6 1.720 orange [4]
KGaTe2 monoclinic C2/c a=11.768, b=11.775, c=16.503, β=100.36°, Z=16 [5]
KGaTe2 triclinic P1 or P1 a=8.34 b=8.34 c=64.4 αβγ~90° 4479.4 4.30 [6]
hexapotassium di-μ-telluridobis (ditelluridogallate) K6Ga2Te6 monoclinic P121/c1 a = 8.616, b = 13.685, c = 11.290, β = 127.61°, Ζ = 2 1054.6 [7]
K[K([18]crown-6)]2[GaTe3] · 2CH3CN monoclinic C2/m a=24.469 b=14.073 c=12.875 β=94.47 Z=4 4369 1.784 yellow (@113K) [8]
CaGa6Te10 monoclinic C2 a=14.40 b=14.40 c=10.21 β=90.0 Z=4 2117.1 [9]
Cr3(GaTe3)2 amorphous [10]
MnGa2Te4 monoclinic C2/c a=11.999, b=11.999, c=24.922, β=104.01°, Z=16 [11]
MnGa2Te4 orthorhombic Pnma a = 27.448, b = 4.192, c = 6.993 Z=4 804.6 5.82 [12]
Fe3(GaTe3)2 amorphous [10]
Co3(GaTe3)2 amorphous [10]
Ni3-xGaTe2 P63/mmc a=3.9393 c=15.7933 Z=2 [13]
Ni2FeGaTe P63/mmc a=3.962 c=15.868 Z=2 215.7 [13]
CuGaTe2 I42d a = 6.02348, c = 11.93979 433.2 [14]
ZnGa2Te4 I4 a=5.930, c=11.859 Z=2 5.7 [15]
ZnGa2Te4 tetragonal I42m a=6.922 c=11.809 [16]
ZnGa2Te4 F43m a=5.843 Z=1/2 [16]
AgGaTe2 I42d a=6.320 c=11.986 Z=2 6.052 melt 725.7°C; heat of fusion= 104.8 J/g−1 [17][18]
AgGa5Te8 tetragonal I41/a a=8.415 c=47.877 [19][20]
Ag2Ga6Te10 [19]
Ag9GaTe6 hexagonal melt 710°C Low thermal conductivity [21][19][22]
CdGa2Te4 tetragonal a=5.742 c=10.730 [23]
InGaTe2 tetragonal I4/mcm a = 8.412, c = 6.875; Z = 4; [24]
In2Ga6Te10 trigonal R32 a=10.34 alpha=89.7 Z=12 5.78 [25]
SnGa6Te10 trigonal P3121/6 a=14.408 c=17.678 Z=6 3178 5.684 black [26]
SnxGa1-xTe x=1/2 cubic a=6.315 251.84 [27]
β-BaGa2Te4 orthorhombic Imma a = 23.813, b = 11.967, c = 6.7215 [28]
Ba5Ga2Ge3Te12 monoclinic P21/c a = 13.6540, b = 9.6705, and c = 23.1134 β =91.829 [28]
LaGaITe2 orthorhombic Pmc21 [29]
CeGaITe2 orthorhombic Pmc21 [29]
PrGaITe2 orthorhombic Pmc21 [29]
NdGaITe2 orthorhombic Pmc21 [29]
Eu0.81Ga2Te4 tetragonal I4/mcm a = 8.2880, c = 6.744, Z = 2 463.24 [30]
HgGa2Te4 cubic F43m a=6.002 Z=1 216.22 [31]
HgGa2Te4 tetragonal I42m a=6.025 c=12.037 Z=2 436.95 black [31]
TlGaTe2 tetragonal I4/mmm D184h a=8.429 c=6.865 band gap 0.84 eV [32][33]
Tl2InGaTe4 tetragonal I4mcm [34]
PbGa6Te10 trigonal P3221/6 a=14.465 c=17.718 Z=6 3210 5.898 black [35][26]

References

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  1. ^ Isaenko, L.; Yelisseyev, A.; Lobanov, S.; Titov, A.; Petrov, V.; Zondy, J.-J.; Krinitsin, P.; Merkulov, A.; Vedenyapin, V.; Smirnova, J. (April 2003). "Growth and properties of LiGaX2 (X = S, Se, Te) single crystals for nonlinear optical applications in the mid-IR". Crystal Research and Technology. 38 (35): 379–387. Bibcode:2003CryRT..38..379I. doi:10.1002/crat.200310047. S2CID 95433320.
  2. ^ Isaenko, L.; Krinitsin, P.; Vedenyapin, V.; Yelisseyev, A.; Merkulov, A.; Zondy, J.-J.; Petrov, V. (2005-07-01). "LiGaTe 2 : A New Highly Nonlinear Chalcopyrite Optical Crystal for the Mid-IR". Crystal Growth & Design. 5 (4): 1325–1329. doi:10.1021/cg050076c. ISSN 1528-7483.
  3. ^ Kienle, L.; Deiseroth, H. J. (1996-09-01). Kienle, L.; Deiseroth, H. J. (eds.). "Crystal structure of natrium trigallium pentatelluride, NaGa 3 Te 5". Zeitschrift für Kristallographie - Crystalline Materials. 211 (9): 629. Bibcode:1996ZK....211..629K. doi:10.1524/zkri.1996.211.9.629. ISSN 2194-4946.
  4. ^ Warren, Christopher J.; Ho, Douglas M.; Haushalter, Robert C.; Bocarsly, Andrew B. (1994). "Electrochemical synthesis of a new gallium telluride containing one-dimensional chains: structure of [(C6H5)4P]GaTe2(en)2(en = ethane-1,2-diamine)". Journal of the Chemical Society, Chemical Communications (3): 361–363. doi:10.1039/c39940000361. ISSN 0022-4936.
  5. ^ Kim, Joonyeong; Hughbanks, Timothy (February 2000). "Synthesis and Structures of Ternary Chalcogenides of Aluminum and Gallium with Stacking Faults: KMQ2 (M=Al, Ga; Q=Se, Te)". Journal of Solid State Chemistry. 149 (2): 242–251. Bibcode:2000JSSCh.149..242K. doi:10.1006/jssc.1999.8523.
  6. ^ Weis, Jürgen; Schäfer, Herbert; Schön, Günter (1976-10-01). "Neue ternäre Telluride und Selenide der Alkalimetalle mit Elementen der 3. Hauptgruppe.: New Ternary Element(I)/Element(III)-Tellurides and Selenides". Zeitschrift für Naturforschung B. 31 (10): 1336–1340. doi:10.1515/znb-1976-1008. ISSN 1865-7117. S2CID 95370844.
  7. ^ Eisenmann, Β.; Hofmann, A. (1991-12-01). "Crystal structure of hexapotassium di-μ-telluridobis( ditelluridogallate), K 6 Ga 2 Te 6". Zeitschrift für Kristallographie - Crystalline Materials. 197 (1–4): 145–146. doi:10.1524/zkri.1991.197.14.145. ISSN 2196-7105. S2CID 101288891.
  8. ^ Park, Chang-Woo; Salm, Robert J.; Ibers, James A. (1995-09-15). "New Tellurometalates of Gallium and Indium: K[K([18]crown-6)]2[GaTe3]· 2CH3CN and[(NEt4)5][In3Te7]· 0.5 Et2O". Angewandte Chemie International Edition in English. 34 (17): 1879–1880. doi:10.1002/anie.199518791. ISSN 0570-0833.
  9. ^ Klee, Wilfried; Schäfer, Herbert (1979-05-01). "Zur Darstellung und Kristallstruktur von CaAl 6 Te 10 und CaGa 6 Te 10 / On the Preparation and Crystal Structure of CaAl 6 Te 10 and CaGa 6 Te 10". Zeitschrift für Naturforschung B. 34 (5): 657–661. doi:10.1515/znb-1979-0502. ISSN 1865-7117. S2CID 53384064.
  10. ^ a b c Jung, Jin-Seung; Hak Kim, Hyun; Gu Kang, Seog; Jun, Jong-Ho; Buisson, Youngsook L.; Ren, Lianwei; O'Connor, Charles J. (February 1998). "Synthesis and characterization of electric and magnetic properties of the new intermetallic compounds M3(GaTe3)2 (M = Cr, Fe, Co)". Inorganica Chimica Acta. 268 (2): 271–277. doi:10.1016/S0020-1693(97)05757-5.
  11. ^ Cannas, M.; Garbato, A.; Garbato, L.; Ledda, F.; Navarra, G. (January 1996). "Crystal growth and structure of MnGa2Te4". Progress in Crystal Growth and Characterization of Materials. 32 (4): 171–183. doi:10.1016/0960-8974(95)00020-8.
  12. ^ Range, K.-J.; Panzer, B.; Klement, U. (February 1990). "MnGa2Te4-II, a high pressure modification of digallium manganese tetratelluride". Journal of the Less Common Metals. 158 (1): L27–L31. doi:10.1016/0022-5088(90)90450-X.
  13. ^ a b Kuznetsov, Alexey N.; Stroganova, Ekaterina A.; Zakharova, Elena Yu; Solopchenko, Alexander V.; Sobolev, Alexey V.; Presniakov, Igor A.; Kirdyankin, Denis I.; Novotortsev, Vladimir M. (June 2017). "Mixed nickel-gallium tellurides Ni 3−x GaTe 2 as a matrix for incorporating magnetic cations: A Ni 3−x Fe x GaTe 2 series". Journal of Solid State Chemistry. 250: 90–99. Bibcode:2017JSSCh.250...90K. doi:10.1016/j.jssc.2017.03.020.
  14. ^ Leon, M.; Merino, J. M.; De Vidales, J. L. Martin (August 1992). "Crystal structure of synthesized CuGaTe2 determined by X-ray powder diffraction using the Rietveld method". Journal of Materials Science. 27 (16): 4495–4500. Bibcode:1992JMatS..27.4495L. doi:10.1007/BF00541585. ISSN 0022-2461. S2CID 96226155.
  15. ^ Rashmi; Dhawan, U. (March 2002). "X-ray powder diffraction study of ZnGa 2 Te 4". Powder Diffraction. 17 (1): 41–43. Bibcode:2002PDiff..17...41R. doi:10.1154/1.1424263. ISSN 0885-7156. S2CID 101865200.
  16. ^ a b Errandonea, D.; Kumar, R. S.; Gomis, O.; Manjón, F. J.; Ursaki, V. V.; Tiginyanu, I. M. (2013-12-21). "X-ray diffraction study on pressure-induced phase transformations and the equation of state of ZnGa 2 Te 4". Journal of Applied Physics. 114 (23): 233507–233507–7. Bibcode:2013JAP...114w3507E. doi:10.1063/1.4851735. hdl:10251/35872. ISSN 0021-8979.
  17. ^ Yusufu, Aikebaier; Kurosaki, Ken; Kosuga, Atsuko; Sugahara, Tohru; Ohishi, Yuji; Muta, Hiroaki; Yamanaka, Shinsuke (2011-08-08). "Thermoelectric properties of Ag 1− x GaTe 2 with chalcopyrite structure". Applied Physics Letters. 99 (6): 061902. Bibcode:2011ApPhL..99f1902Y. doi:10.1063/1.3617458. ISSN 0003-6951.
  18. ^ Burger, A.; Ndap, J.-O.; Cui, Y.; Roy, U.; Morgan, S.; Chattopadhyay, K.; Ma, X.; Faris, K.; Thibaud, S.; Miles, R.; Mateen, H. (May 2001). "Preparation and thermophysical properties of AgGaTe2 crystals". Journal of Crystal Growth. 225 (2–4): 505–511. Bibcode:2001JCrGr.225..505B. doi:10.1016/S0022-0248(01)00957-5.
  19. ^ a b c Julien, C.; Ivanov, I.; Khelfa, A.; Alapini, F.; Guittard, M. (June 1996). "Characterization of the ternary compounds AgGaTe2 and AgGa5Te8". Journal of Materials Science. 31 (12): 3315–3319. Bibcode:1996JMatS..31.3315J. doi:10.1007/BF00354684. ISSN 0022-2461. S2CID 98409362.
  20. ^ Guittard, M; Rivet, J; Mazurier, A; Jaulmes, S; Fourcroy, P.H (February 1988). "Systeme Ag2Te Ga2Te3. phases intermediaires. determinations structurales. diagramme de phase". Materials Research Bulletin (in French). 23 (2): 217–225. doi:10.1016/0025-5408(88)90098-0.
  21. ^ Guittard, M.; Rivet, J.; Alapini, F.; Chilouet, A.; Loireau-Lozac'h, A.-M. (June 1991). "Description du système ternaire Ag-Ga-Te". Journal of the Less Common Metals (in French). 170 (2): 373–392. doi:10.1016/0022-5088(91)90339-6.
  22. ^ Lin, Siqi; Li, Wen; Bu, Zhonglin; Shan, Bing; Pei, Yanzhong (2020-02-24). "Thermoelectric p-Type Ag 9 GaTe 6 with an Intrinsically Low Lattice Thermal Conductivity". ACS Applied Energy Materials. 3 (2): 1892–1898. doi:10.1021/acsaem.9b02330. ISSN 2574-0962. S2CID 213996120.
  23. ^ Nikolic, P M; Stojilkovic, S M (1981-07-10). "Far infrared optical properties of single crystal CdGa 2 Te 4". Journal of Physics C: Solid State Physics. 14 (19): L551–L555. Bibcode:1981JPhC...14L.551N. doi:10.1088/0022-3719/14/19/006. ISSN 0022-3719.
  24. ^ Deiseroth, H.-J.; Müller, D.; Hahn, H. (June 1985). "Strukturuntersuchungen an InGaSe2 und InGaTe2". Zeitschrift für anorganische und allgemeine Chemie (in German). 525 (6): 163–172. doi:10.1002/zaac.19855250619. ISSN 0044-2313.
  25. ^ Guittard, M.; Alapini, F.; Jaulmes, S.; Julien-Pouzol, M.; Flahaut, J. (November 1978). "Sur une famille de tellurures ternaires formes par le gallium avec l'etain II, le plomb ou l'indium I, de type SnGa6Te10". Materials Research Bulletin (in French). 13 (11): 1157–1161. doi:10.1016/0025-5408(78)90203-9.
  26. ^ a b Kienle, L.; Deiseroth, H. J. (1998-11-01). Kienle, L.; Deiseroth, H. J. (eds.). "SnAl 6 Te 10 , SnGa 6 Te 10 and PbGa 6 Te 10 : superstructures, symmetry relations and structural chemistry of filled β -manganese phases". Zeitschrift für Kristallographie - Crystalline Materials. 213 (11): 569–574. Bibcode:1998ZK....213..569K. doi:10.1524/zkri.1998.213.11.569. ISSN 2194-4946.
  27. ^ Dovletov, K.O. (1983). "RELATIONSHIP BETWEEN THE PHYSICOCHEMICAL AND ELECTROPHYSICAL PROPERTIES OF SEMICONDUCTING COMPOUNDS OF THE A2IBIVC3VI-TYPE, A4IB3IVC5VI-TYPE, AIIIBIVC2VI-TYPE, AND A2IIIBIVC3VI-TYPES". Inorganic Materials. 19 (8): 1174–1178.
  28. ^ a b Sun, Mengran; Zhang, Xingyu; Xing, Wenhao; Li, Zhuang; Liu, Wenhao; Lin, Zheshuai; Yin, Wenlong; Yao, Jiyong (2021-10-04). "Synthesis and Characterizations of Two Tellurides β-BaGa 2 Te 4 and Ba 5 Ga 2 Ge 3 Te 12 with Flexible Chain Structure". Inorganic Chemistry. 60 (19): 14793–14802. doi:10.1021/acs.inorgchem.1c02045. ISSN 0020-1669. PMID 34529425. S2CID 237546151.
  29. ^ a b c d Lindemann, T.; Isaeva, A.; Oeckler, O.; IUCr (2021-08-14). "Tellurides with monovalent Ga and In – from chains to networks". Acta Crystallographica Section A: Foundations and Advances. 77: C446. doi:10.1107/S0108767321092400. S2CID 246800805. Retrieved 2022-04-20.
  30. ^ "Two Ternary Europium Chalcogenides Eu(1-x)Ga2Te4(x≈0.19) and EuY2Se4, Experimental and Theoretical Investigations". www.cqvip.com (in English and Chinese). Yangzhou University. August 2018. Archived from the original on April 22, 2022. Retrieved 24 April 2023.
  31. ^ a b Agostinellt, E.; Gastaldi, L.; Viticoli, S. (April 1985). "Crystal growth and X-ray structural investigatton of two forms of HgGa2Te4". Materials Chemistry and Physics. 12 (4): 303–312. doi:10.1016/0254-0584(85)90101-4.
  32. ^ Nagat, A. T.; Gamal, G. A.; Hussein, S. A. (1991). "Growth and Characterization of Single Crystals of the Ternary Compound TlGaTe2". Crystal Research and Technology. 26 (1): 19–23. Bibcode:1991CryRT..26...19N. doi:10.1002/crat.2170260105.
  33. ^ Nagat, A. T.; Gamal, G. A.; Hussein, S. A. (1990-08-16). "Growth and Characterization of Ternary Compound TiGaTe2 Single Crystals". Physica Status Solidi A (in German). 120 (2): K163–K167. Bibcode:1990PSSAR.120..163N. doi:10.1002/pssa.2211200254.
  34. ^ Qasrawi, A. F.; Gasanly, N. M. (2007). "Crystal data and some physical properties of Tl2InGaTe4 crystals". Crystal Research and Technology. 42 (8): 807–811. Bibcode:2007CryRT..42..807Q. doi:10.1002/crat.200710909. S2CID 197109766.
  35. ^ Avanesov, S.A.; Badikov, D.V.; Badikov, V.V.; Panyutin, V.L.; Petrov, V.; Shevyrdyaeva, G.S.; Martynov, A.A.; Mitin, K.V. (November 2014). "Phase equilibrium studies in the PbTe–Ga2Te3 and PbTe–In2Te3 systems for growing new nonlinear optical crystals of PbGa6Te10 and PbIn6Te10 with transparency extending into the far-IR". Journal of Alloys and Compounds. 612: 386–391. doi:10.1016/j.jallcom.2014.05.168.