Titanium trisulfide (TiS3) is an inorganic chemical compound of titanium and sulfur. Its formula unit contains one Ti4+ cation, one S2− anion and one S22−.

Titanium trisulfide
Names
Other names
Titanium(IV) sulfide
Identifiers
3D model (JSmol)
ChemSpider
  • InChI=1S/3S.Ti
    Key: HOZYDKBKUUVYKD-UHFFFAOYSA-N
  • InChI=1S/S2.S.Ti/c1-2;;/q2*-2;+4
    Key: KVFIBOBJNNMQLV-UHFFFAOYSA-N
  • covalent form: [Ti]1(=S)SS1
  • ionic form: [S-][S-].[S-2].[Ti+4]
Properties
TiS3
Molar mass 144.062 g/mol
Appearance Black whiskers
Band gap 1 eV (indirect)[1][2]
Electron mobility 80 cm2/(V·s)[3]
Structure[1][2]
Monoclinic, mP8
P21/m, No. 11
a = 0.4973 nm, b = 0.3443 nm, c = 0.8714 nm
α = 90°, β = 97.74°, γ = 90°
2
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).

TiS3 has a layered crystal structure, where the layers are weakly bonded to each other and can be exfoliated with an adhesive tape. The exfoliated layers have potential applications in ultrathin field-effect transistors.[2]

Synthesis

edit

Millimeter-long crystalline whiskers of TiS3 can be grown by chemical vapor transport at ca. 500 °C, using excess sulfur as the transporting gas.[1][2]

Properties

edit
 
Transmission electron micrograph of TiS3 revealing its layered structure

TiS3 is an n-type semiconductor with an indirect bandgap of about 1 eV.[2] Its individual layers are made of TiS atomic chains; hence they are anisotropic and their properties depend on the in-plane orientation. For example, in the same sample, electron mobility can be 80 cm2/(V·s) along the b-axis and 40 cm2/(V·s) along the a-axis.[3]

References

edit
  1. ^ a b c Gorochov, O.; Katty, A.; Le Nagard, N.; Levy-Clement, C.; Schleich, D.M. (1983). "Photoelectrochemical study of TiS3 in aqueous solution". Materials Research Bulletin. 18: 111–118. doi:10.1016/0025-5408(83)90178-2.
  2. ^ a b c d e Lipatov, Alexey; Wilson, Peter M.; Shekhirev, Mikhail; Teeter, Jacob D.; Netusil, Ross; Sinitskii, Alexander (2015). "Few-layered titanium trisulfide (TiS3) field-effect transistors". Nanoscale. 7 (29): 12291–12296. Bibcode:2015Nanos...712291L. doi:10.1039/C5NR01895A. PMID 26129825.
  3. ^ a b Wu, Kedi; Torun, Engin; Sahin, Hasan; Chen, Bin; Fan, Xi; Pant, Anupum; Parsons Wright, David; Aoki, Toshihiro; Peeters, Francois M.; Soignard, Emmanuel; Tongay, Sefaattin (2016). "Unusual lattice vibration characteristics in whiskers of the pseudo-one-dimensional titanium trisulfide TiS3". Nature Communications. 7: 12952. Bibcode:2016NatCo...712952W. doi:10.1038/ncomms12952. PMC 5036143. PMID 27653671. S2CID 1595553.