Dr. Niloufar Raeis-Hosseini is a nanoscientist who works as an honorary research fellow in the Electronics and Electrical Engineering (EEE) Department at Imperial College London (ICL). She has secured her research grant by awarding a prestigious fellowship from the "Royal Society". She is a specialist in Nanotechnology, Nanoelectronics, Flexible Organic Electronics, Data Storage Systems, and Memory Devices. She is a member of the Material Research Society (MRS) and European Material Research Society (EMRS). She holds honorary membership of IEEE Women in Engineering (WIE) as well.
1- Education and Research Direction Niloufar has over a decade of successful experience in researching Nanofabrication, and the development of the next generation of Nonvolatile Memories (NVMs) named Resistive Switching Random Access Memories (ReRAMs). Her research interests lie in the development of nanostructured materials and nanocomposites for nanoelectronic and optoelectronic device applications. She also investigates ReRAM-based Artificial Synapses. She has received her Ph.D. in “Nanoelectronic Materials & Devices” from Pohang University of Science and Technology (POSTECH) in South Korea. Her Ph.D. thesis is entitled “Reconfigurable and Flexible Resistive Switching Memories and their Application in Neuromorphic Computing”. Soon after graduation with honors and awards, She secured a prestigious fellowship and a professional research grant from National Research Foundation Korea (NRF). As the competition was open to candidates from all disciplines, it was quite exciting to get ranked in the first place as a future leader in nanoelectronics. She enhanced her scientific profile by conducting independent research at nanoelectronics and nanophotonics by joining the “Nanoscale Photonics & Integrated Manufacturing” group at POSTECH. During her Ph.D. and postdoc period, she was funded by an international fellowship of “Brain Korea” (BK 21 Plus).
2- Career Goal She has positively contributed to the advancement of nanoelectronics using alternative materials from transitional metal oxides to phase change, nanocomposites, and organic materials. By exploiting natural polymers' intrinsic properties, she has reported exceptional nanodevices comparable with their semiconductor counterparts. Her goal is to produce sustainable memristors by applying different types of smart materials and optimizing design parameters during nanofabrication. She is particularly experienced in flexible and transparent biocompatible ReRAMs & memristors to make an impact on green nanotechnology. She has introduced novel biocompatible flexible and transparent ReRAMs with the stability of electrical and mechanical properties comparable with their rigid counterparts. Her fabricated NVM is potentially feasible to pave the way for flexible, implantable, and wearable consumer electronics. She tries to overcome the memristor’s issues of data endurance and retention. She fabricates reliable artificial synaptic devices based on memristors with conductance uniformity to mimic a biological brain.
3- Awards and honors
Dr. Niloufar Raeis-Hosseini is a nominee for International Women in Engineering in 2021 and she is featured on @inwed of Imperial College London. She was a EEE community nominee for "Royal Academy of Engineering" in 2020 who is featured in @ThisIsEngineering. One of her distinctions is that she has been nominated by the president of Imperial College London to attend the 70th Lindau Nobel Laureate Meeting, Germany and in 2020. She was endorsed to a laureate “Meeting of Minds” by the Royal Society in 2019. She is an awardee of IOP Outstanding Reviewer, "Nano Futures", by the Institute of Physics (IOP) publishing. She not only graduated with honors and awards from the Materials Engineering Department of POSTECH, but also got the best poster award in 15th international Nanotech Symposium, Nano Korea 2017, S. Korea. She has been nominated as a "young scientist in semiconductor industry" by winning SK-Hynix Fellowship Program for two consecutive years during her Ph.D. for her idea on "Flexible Synapses Based on Biocompatible Memristors" and "Transparent and Flexible ReRAM using Bio-Materials".
4- Grants and Funding
She has secured £330K funding as a PI for her genuine idea on nanoelectronic materials and devices, between 2018 and 2021. She has been awarded as principal investigator (PI) for costed grant COVID19 (£27.5K), travel grant; Conference/Workshop (£24K), and Newton International Fellowship (£94.5K) from the Royal Society funding body. Her grant from the National Research Foundation (NRF) of South Korea was £100K. Her BK 21 Plus fellowship for his postdoctoral research was granted £30K.
5- Publications
She has over 63 peer-reviewed journal/conference publications in nanoelectronics, nanophotonics, memristors, synaptic devices, and solid oxide fuel cells. Her citations are more than 745 with h-index 11. She has 3 “cover photos” of my publications in high-impact factor journals. She has 2 national patents, 2 invited review articles, and 2 editorial journal articles in her track record. She delivered more than 10 invited talks, 1 plenary talk, 1 pitch talk, and 4 keynote speeches at a highly recognized international conference.