Voigt–Thomson law describes anisotropic magnetoresistance effect in a thin film strip as a relationship between the electric resistivity and the direction of electric current:[1]
where:
- is the angle of direction of current in relation to the direction of magnetic field
- is the initial resistivity
- is the change of resistivity (proportional to MR ratio)
The equation can also be expressed as:[2]
where:
- is the parallel component of resistivity
- is the perpendicular component
References
edit- ^ Nie, H. B; Xu, S. Y; Li, J; Ong, C. K; Wang, J. P (2002). "Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers". Journal of Applied Physics. 91 (10): 7532–7534. arXiv:cond-mat/0305687. Bibcode:2002JAP....91.7532N. doi:10.1063/1.1447875. S2CID 43762722.
- ^ Royal Society (Great Britain) (1936). "Proceedings of the Royal Society of London: Mathematical and physical sciences. Series A". Proceedings of the Royal Society of London. Series A, Mathematical and Physical Sciences. Harrison and Son. ISSN 0962-8444. Retrieved 2015-07-19.