Voigt–Thomson law describes anisotropic magnetoresistance effect in a thin film strip as a relationship between the electric resistivity and the direction of electric current:[1]

where:

is the angle of direction of current in relation to the direction of magnetic field
is the initial resistivity
is the change of resistivity (proportional to MR ratio)

The equation can also be expressed as:[2]

where:

is the parallel component of resistivity
is the perpendicular component

References

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  1. ^ Nie, H. B; Xu, S. Y; Li, J; Ong, C. K; Wang, J. P (2002). "Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers". Journal of Applied Physics. 91 (10): 7532–7534. arXiv:cond-mat/0305687. Bibcode:2002JAP....91.7532N. doi:10.1063/1.1447875. S2CID 43762722.
  2. ^ Royal Society (Great Britain) (1936). "Proceedings of the Royal Society of London: Mathematical and physical sciences. Series A". Proceedings of the Royal Society of London. Series A, Mathematical and Physical Sciences. Harrison and Son. ISSN 0962-8444. Retrieved 2015-07-19.